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Calendar of Physics Talks Vienna
| Testing the limits of H-implantation for Si power MOSFETs: Advantages and Challenges |
| Speaker: | Andrea Fugger (TU Wien, IAP, FB Angewandte Grenzflächenphysik) |
| Abstract: | Semiconductor manufacturing is constantly searching for methods to achieve smaller process windows and improved yield. Proton implantation in addition to the standard ion implants is a promising method to reach that goal for Si-power MOSFETs. While there is a lot of literature about Hydrogen in Si base materials [1,2] or its use for lifetime adjustments and formation of field stop regions [3], its use as a dopant in the active region of power Devices is largely unexplored.
In this talk I will provide an overview of the advantages of H-implantation and two examples of challenges during industrial use. The main example concerns the technical implementation of the method in a production line. Key points here are the implant depth profile, the allowed temperature budget and the materials in the way of the beam, as well as potentially resulting radiation [4]. The second example introduces th |
| Date: | Tue, 20.01.2026 |
| Time: | 16:00 |
| Location: | TU Wien, Institut für Angewandte Physik, E134 1040 Wien, Wiedner Hauptstraße 8-10 Yellow Tower „B“, 5th floor, SEM.R. DB gelb 05 B |
| Contact: | Univ.Prof. Dr. Markus Valtiner |
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